Search results for " LEDs"
showing 10 items of 14 documents
Study and optimization of near UV InGaN/GaN based Light Emitting Diodes at low injection current regimes
2006
Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction
2020
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash
Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes
2015
We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the orga…
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile
2021
Recent reports indicated that the use of an InAlN underlayer (UL) can significantly improve the efficiency of InGaN/GaN quantum well (QW) LEDs. Currently, this result is explained by considering that the UL reduces the density of nonradiative recombination centers in the QWs. However, an experimental proof of the reduction of defects in the QWs is not straightforward. In this paper, we use combined electrical (I-V), optical (L-I), capacitance (C-V), steady-state photocapacitance (SSPC) and light-assisted capacitance-voltage (LCV) measurements to explain why devices with UL have a much higher efficiency than identical LEDs without UL. Specifically, we demonstrated an improvement in both elec…
Tunable Eu2+ emission in KxNa1 − xLuS2 phosphors for white LED application
2016
Set of Eu2+-doped KxNa1 − xLuS2 phosphors (x = 0–1) in the form of transparent crystalline hexagonal platelets was successfully synthesized by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, X-ray fluorescence, time-resolved luminescence spectroscopy and electron paramagnetic resonance. Special attention was given to photoluminescence emission spectra under the 395 nm and 455 nm excitation aiming to obtain white emission with tunable color temperature. EPR method was employed to understand the Eu2+ incorporation and distribution in the KxNa1 − xLuS2 hosts. CIE xy-coordinates were calculated to compare effects o…
First InGaN/GaN thin Film LED using SiCOI engineered substrate
2006
InGaN / GaN multiple quantum well (MQW) light emitting diodes (LEDs) were deposited by metal-organic chemical vapor deposition (MOCVD) onto SiCOI engineered substrates. SiCOI substrates are composed of SiC thin film transferred on a silicon substrate through silicon oxide layer by the Smart Cut™ technology. LEDs structures grown on SiCOI were characterized, then transferred onto Si substrates via a metallic bonding process and SiCOI substrates were removed. Three different metallic stacks were used for metallic bonding, including mirror and barrier diffusion. Vertical thin film LED obtained were characterized and showed a 2 to 3 times increase of external quantum efficiency. These results d…
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
2019
We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhibits a bandgap of 4.6 eV. This allows alleviating absorption issues in NUV LEDs. We demonstrate that the internal quantum efficiency of 405 nm single InGaN/GaN quantum well LEDs with InAlN UL is similar to 70% compared to less than 10% for LEDs without UL. Excellent I-V characteristics are achieved thanks to polarization charge screening with high doping level at the InAlN/GaN interface. (C) 2019 The Japan Society of Applied Physics
Ce:YAG nanoparticles embedded in a PMMA matrix: preparation and characterization
2010
A Ce:YAG-poly(methyl methacrylate) composite was prepared using in situ polymerization by embedding the Ce:YAG nanopowder in a blend of methyl methacrylate (MMA) and 2-methacrylic acid (MAA) monomers and activating the photopolymerization using a radical initiator. The obtained nanocomposite was yellow and transparent. Its characterization was performed using transmission electron microscopy, small angle X-ray scattering, (13)C cross-polarization magic-angle spinning nuclear magnetic resonance, and photoluminescence spectroscopy. Results showed that Ce:YAG nanoparticles are well dispersed in the polymeric matrix whose structure is organized in a lamellar shape. The luminescence properties o…
A simple method for measuring OLEDs efficiency
2015
External quantum efficiency (EQE) of organic light emitting diodes (OLEDs) is among the most important parameters for devices assessment and for comparing OLEDs performance. The EQE is the ratio of the total number of photons emitted by the OLED in all directions to the number of electrons injected.
Stability improvement of PMMA and Lumogen® coatings for hybrid white LEDs
2014
Hybrid white LEDs employing perylene-based dyes for the frequency down-conversion of blue light, generated by a standard inorganic source, suffer from colour rendering variations due to the degradation of the organic molecule under prolonged irradiation. To avoid such inconvenient, proper encapsulation of the dyes in resins or other polymer matrices can prevent their accelerated ageing; nevertheless, embedding polymers can also exhibit significant bleaching caused by chemico-physical agents. Among all, polymethyl methacrilate (PMMA) is one of the most used materials for the fabrication of hybrid LEDs' colour conversion coatings, therefore its stability needs to be investigated.